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Farhad Ghoddoussi, Ph.D
Post Doctoral Mailing Address: 540 East Canfield, 2126
Scott Hall E mail: fghoddoussi@med.wayne.edu Phone: (313) 577-6190
09/05-Present: Postodoctrol Fellow/Research Associate :Psychiatry and Behavioral Neuroscience Department at the Wayne State University School of Medicine, Detroit, 48201, MI. Research in preclinical biomedical applications of magnetic resonance spectroscopy (MRS) in neuroscience and psychiatry. Maintaining and running an 11.7Tesla Bruker magnet used for spectroscopy and imaging. 01/04-08/05: Visiting Assistant Professor -Oakland University, Physics Department, Rochester, MI 48309. Education: 1998-2003 Ph.D., Experimental Physics, December2003 Wayne State University, Detroit MI 48202. GPA: 3.8 Dissertation Title: The Temperature-Electric Field Phase Diagram of a Ferroelectric Smectic C* Liquid Crystals.
1993-1997 Master of Science, Theoretical Physics, February 1997 University of Alberta, Alberta, Canada T6H 2 J1 GPA: 4.0 Dissertation Title: Topics in Charm Mesons Decays.
1985-1990 Bachelor of Science, Applied Physics, June 1990 Sharif University of Technology, Tehran, Iran GPA: 3.7 Project Title: Thin Film Optical Filters.
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